Di-interstitial defect in silicon revisited
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4831963
Reference50 articles.
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1. Carrier-induced formation of electrically active boron-interstitial clusters in irradiated boron-doped silicon;Journal of Applied Physics;2024-02-01
2. Acousto–defect interaction in irradiated and non-irradiated silicon n+–p structures;Journal of Applied Physics;2018-04-28
3. The di‐interstitial in silicon: Electronic properties and interactions with oxygen and carbon impurity atoms;physica status solidi (a);2017-05-29
4. Electron and Proton Irradiation of Silicon;Semiconductors and Semimetals;2015
5. Semi-empirical modelling of the di-interstitial defect in silicon;Journal of Materials Science: Materials in Electronics;2014-09-21
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