High aspect ratio and high breakdown strength metal-oxide capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4737641
Reference18 articles.
1. Development of hafnium based high-k materials—A review
2. Study of the effect of thermal annealing on high k hafnium oxide thin film structure and electrical properties of MOS and MIM devices
3. Study of hafnium oxide deposited using Dense Plasma Focus machine for film structure and electrical properties as a MOS device
4. Atomic Layer Deposition of Aluminum Thin Films Using an Alternating Supply of Trimethylaluminum and a Hydrogen Plasma
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