Author:
Srivastava A.,Nahar R.K.,Sarkar C.K.,Singh W.P.,Malhotra Y.
Subject
Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference25 articles.
1. On the scaling issues and high-κ replacement of ultrathin gate dielectrics for nanoscale MOS transistors;Wong;Microelectron Eng,2006
2. The road to miniaturization;Wong;Phys World,2005
3. Ultra-thin gate oxides – performance and reliability;Iwai;IEDM Technol Dig,1998
4. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET’s;Lo;IEEE Electron Dev Lett,1997
5. Limits of gate oxide scaling in nano-transistors;Yu;VLSI Technol Dig,2000
Cited by
20 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献