Electrical characteristics ofp+‐Ge/(N‐GaAs andN‐AlGaAs) junctions and their applications to Ge base transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102679
Reference13 articles.
1. The realization of a GaAs—Ge wide band gap emitter transistor
2. PnpGaAs/Ge/Ge phototransistor grown by molecular beam epitaxy: Implications for bipolar and hot‐electron transistors
3. Surface processes controlling MBE heterojunction formation: GaAs(100)/Ge interfaces
4. Interface morphology of epitaxial growth of Ge on GaAs and GaAs on Ge by molecular beam epitaxy
5. Some observations on Ge:GaAs(001) and GaAs:Ge(001) interfaces and films
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1. Direct band Ge and Ge/InGaAs quantum wells in GaAs;Journal of Applied Physics;2011-06-15
2. Capacitance–voltage characteristic of anisotype heterojunction in the presence of interface states and series resistance;Applied Surface Science;2001-02
3. Schottky barrier tuning with heterovalent interlayers: Al/Ge/GaAs versus Al/Si/GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
4. The DC characteristics of anisotype heterojunction in the presence of interface states and series resistance;Applied Surface Science;1999-04
5. On the feasibility of using ultraviolet/ozone grown oxide as an atomic interdiffusion barrier in Ge/GaAs heterojunctions;Applied Physics Letters;1998-05-25
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