PnpGaAs/Ge/Ge phototransistor grown by molecular beam epitaxy: Implications for bipolar and hot‐electron transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96483
Reference13 articles.
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5. Heterojunction band discontinuity growth sequence variation at compound semiconductor-germanium (110) interfaces: Possible role of antiphase disorder
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