Heterojunction band discontinuity growth sequence variation at compound semiconductor-germanium (110) interfaces: Possible role of antiphase disorder
Author:
Publisher
American Vacuum Society
Subject
General Engineering
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Structural, morphological, and band alignment properties of GaAs/Ge/GaAs heterostructures on (100), (110), and (111)A GaAs substrates;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2013-01
2. Semiconductor Heterojunctions;Surfaces and Interfaces of Electronic Materials;2012-12-28
3. Engineered interface properties in ZnSSe/GaAs heterovalent heterostructures;Journal of Crystal Growth;2000-06
4. Energy states in ZnSe-GaAs heterovalent quantum structures;Physical Review B;1999-12-15
5. Tunable band offsets via control of interface atomic configuration in GaAs-on-ZnSe(001) heterovalent heterostructures;Journal of Applied Physics;1999-02
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