Direct band Ge and Ge/InGaAs quantum wells in GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3594753
Reference28 articles.
1. Long wavelength (λ∼1.5 μm) native‐oxide‐defined InAlAs‐InP‐InGaAsP quantum well heterostructure laser diodes
2. High-power 1.5 µm InAs-InGaAs quantum dot lasers on GaAs substrates
3. Long wavelength GaAsP∕GaAs∕GaAsSb VCSELs on GaAs substrates for communications applications
4. AlxGa1−xAsySb1−y phase diagram
5. GaAs-based room-temperature continuous-wave 1.59μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy
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