Long wavelength (λ∼1.5 μm) native‐oxide‐defined InAlAs‐InP‐InGaAsP quantum well heterostructure laser diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356200
Reference9 articles.
1. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices
2. High‐performance planar native‐oxide buried‐mesa index‐guided AlGaAs‐GaAs quantum well heterostructure lasers
3. Coupled‐stripe in‐phase operation of planar native‐oxide index‐guided AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum‐well heterostructure laser arrays
4. Low‐threshold disorder‐defined native‐oxide delineated buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers
5. Native‐oxide stripe‐geometry In0.5(AlxGa1−x)0.5P‐In0.5Ga0.5P heterostructure laser diodes
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2. High-Index-Contrast λ = 1.55 μm AlInGaAs/InP Laser Heterostructure Waveguides Through Selective Core Oxidation;physica status solidi (a);2018-10-07
3. High Performance InAs/${\rm In}_{0.53}{\rm Ga}_{0.23}{\rm Al}_{0.24}{\rm As}$/InP Quantum Dot 1.55 $\mu{\rm m}$ Tunnel Injection Laser;IEEE Journal of Quantum Electronics;2014-01
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