Efficient doping of nitrogen with high activation ratio into ZnSe using a high-power plasma source
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119314
Reference13 articles.
1. Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth
2. p‐type ZnSe by nitrogen atom beam doping during molecular beam epitaxial growth
3. Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy
4. Self-compensation in nitrogen-doped ZnSe
5. Lattice location of N atoms in heavily N-doped ZnSe studied with ion beam analysis and its implication on deep level defects
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1. N doping using N2O and NO sources: From the viewpoint of ZnO;Journal of Applied Physics;2004-05-15
2. Recent developments in the MOVPE growth of low H content ZnSe-based compounds and heterostructures;Progress in Crystal Growth and Characterization of Materials;2002-01
3. Atomic nitrogen doping in p-ZnSe with high activation ratio using a high-power plasma source;Journal of Crystal Growth;1998-02
4. Nitrogen dopant site within the ZnSe lattice as studied by ion beam analysis;Journal of Crystal Growth;1998-02
5. Doping limits in II–VI compounds — Challenges, problems and solutions;Progress in Crystal Growth and Characterization of Materials;1998-01
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