Nitrogen dopant site within the ZnSe lattice as studied by ion beam analysis
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference17 articles.
1. Acceptor compensation mechanism by midgap defects in nitrogen‐doped ZnSe films
2. Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy
3. Lattice location of N atoms in heavily N-doped ZnSe studied with ion beam analysis and its implication on deep level defects
4. Native defects and self-compensation in ZnSe
5. Acceptor and donor states of impurities in wide band gap II–VI semiconductors
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1. Oxygen Incorporation in ZnTeO Alloys via Molecular Beam Epitaxy;Journal of Electronic Materials;2014-01-14
2. First-principles calculation ofp-type doping of ZnSe using nitrogen;Physical Review B;2001-12-26
3. Electrically stable p-type doping of ZnSe grown by molecular beam epitaxy with different nitrogen activators;Journal of Crystal Growth;2000-06
4. Reconstruction of excitonic spectrum during annealing of ZnSe:N grown by metalorganic vapor phase epitaxy;Journal of Electronic Materials;2000-04
5. The deactivation of nitrogen acceptors in ZnSxSe1−x and MgyZn1−ySxSe1−x studied by combining positron annihilation, SIMS, and CV measurements;Physica B: Condensed Matter;1999-12
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