The deactivation of nitrogen acceptors in ZnSxSe1−x and MgyZn1−ySxSe1−x studied by combining positron annihilation, SIMS, and CV measurements-Reference-Cited by-同舟云学术

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The deactivation of nitrogen acceptors in ZnSxSe1−x and MgyZn1−ySxSe1−x studied by combining positron annihilation, SIMS, and CV measurements

Published:1999-12 Issue: Volume:273-274 Page:902-906
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Oila J,Saarinen K,Laine T,Hautojärvi P,Uusimaa P,Pessa M,Likonen J

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Compensation ofp-Type Doping in ZnSe: The Role of Impurity-Native Defect Complexes

2. First-principles study of the compensation mechanism for nitrogen acceptors in ZnSe

3. Bulk Lattice Instability in II-VI Semiconductors and Its Effect on Impurity Compensation

4. Nitrogen-impurity–native-defect complexes in ZnSe

5. Identification of the Native Vacancy Defects in Both Sublattices ofZnSxSe1−xby Positron Annihilation

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Native vacancies in nitrogen-doped and undoped ZnSe layers studied by positron annihilation;Physical Review B;2000-12-15

2. ZnS x Se1–x : ionization energies (impurities and defects);New Data and Updates for II-VI Compounds

3. ZnS x Se1–x : g values (impurities and defects);New Data and Updates for II-VI Compounds

4. Zn1–x Mg x S y Se1–y : g values, impurity concentration;New Data and Updates for II-VI Compounds

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