Identification of the Native Vacancy Defects in Both Sublattices ofZnSxSe1−xby Positron Annihilation-Reference-Cited by-同舟云学术

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Identification of the Native Vacancy Defects in Both Sublattices ofZnSxSe1−xby Positron Annihilation

Published:1996-10-14 Issue:16 Volume:77 Page:3407-3410
ISSN:0031-9007
Container-title:Physical Review Letters
language:en
Short-container-title:Phys. Rev. Lett.

Author:

Saarinen K.,Laine T.,Skog K.,Mäkinen J.,Hautojärvi P.,Rakennus K.,Uusimaa P.,Salokatve A.,Pessa M.

Publisher

American Physical Society (APS)

Subject

General Physics and Astronomy

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.77.3407/fulltext

Reference14 articles.

1. Role of native defects in wide-band-gap semiconductors

2. Compensation ofp-Type Doping in ZnSe: The Role of Impurity-Native Defect Complexes

3. First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe

4. Column V acceptors in ZnSe: Theory and experiment

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