Passivation of InP heterojunction bipolar transistors by strain controlled plasma assisted electron beam evaporated hafnium oxide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3673564
Reference15 articles.
1. On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface states
2. Passivation of InGaAs surfaces and InGaAs/InP heterojunction bipolar transistors by sulfur treatment
3. Effect of surface passivation with SiN on the electrical properties of InP/InGaAs heterojunction bipolar transistors
4. Surface Currents in InP/InGaAs Heterojunction Bipolar Transistors Produced by Passivation Film Formation
5. Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer;Nanomaterials;2021-12-19
2. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition;Nanoscale Research Letters;2017-05-08
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