Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and theory
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4807907
Reference32 articles.
1. Integration of strained and relaxed silicon thin films on silicon wafers via engineered oxide heterostructures: Experiment and theory
2. Atomically smooth and single crystalline Ge(111)/cubic-Pr2O3(111)/Si(111) heterostructures: Structural and chemical composition study
3. ZnO epitaxy on (111) Si using epitaxial Lu2O3 buffer layers
4. Epitaxial ZnO films on (111) Si substrates with Sc2O3 buffer layers
5. Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth of ScN(111) on Sc2O3(111) for GaN integration on Si(111): Experiment and ab-initio calculations;Journal of Applied Physics;2016-10-07
2. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts;Journal of Applied Physics;2014-08-28
3. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2014-07
4. Virtual GaN substrates via Sc2O3/Y2O3 buffers on Si(111): Transmission electron microscopy characterization of growth defects;Journal of Applied Physics;2013-06-14
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