Control of interfacial silicate between HfO2 and Si by high concentration ozone
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2173708
Reference14 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. High dielectric constant oxides
3. Interlayer composition of HfO2∕Si(001) films
4. Chemical structure of the interface in ultrathin HfO2/Si films
5. HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy
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3. Improvement on the electrical characteristics of Pd/HfO 2 /6H-SiC MIS capacitors using post deposition annealing and post metallization annealing;Applied Surface Science;2017-08
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