Kinetics of tungsten low‐pressure chemical‐vapor deposition using WF6and SiH4studied byin situgrowth‐rate measurements
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352757
Reference12 articles.
1. Low Pressure Chemical Vapor Deposition of Tungsten and Aluminum for VLSI Applications
2. Gas/surface reactions in the chemical vapor deposition of tungsten using WF6/SiH4 mixtures
3. Study on mechanism of selective chemical vapor deposition of tungsten usinginsituinfrared spectroscopy and Auger electron spectroscopy
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Resolving steady-state multiplicities for diffusion with surface chemical reaction by invoking the Prigogine principle of minimum entropy production;Chemical Engineering Research and Design;2017-12
2. Effects of the Deposition Process Variation on the Performance of Open TSVs;2016 IEEE 66th Electronic Components and Technology Conference (ECTC);2016-05
3. Low Temperature Chemical Vapor Deposition of Silicon-rich Tungsten Silicide Films from Tungsten Hexafluoride - Disilane Pre-activated Mixtures;INT J CHEM REACT ENG;2012
4. Studying of physical characteristics and optimizing of gap filling for tungsten;Materials Science in Semiconductor Processing;2011-09
5. Kinetic modeling of tungsten silicide chemical vapor deposition from WF6 and Si2H6: Determination of the reaction scheme and the gas-phase reaction rates;Chemical Engineering Science;2007-11
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3