Studying of physical characteristics and optimizing of gap filling for tungsten-Reference-Cited by-同舟云学术

Studying of physical characteristics and optimizing of gap filling for tungsten

Published:2011-09 Issue:3-4 Volume:14 Page:235-240
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Chen C.C.,Kao I.C.,Kuo H.C.,Chien H.J.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

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3. Suzuki T, Misawa N, Hara T, Ohba T, Furumura Y. In: Proceedings of tungsten and other advanced metals for VLSI/ULSI applications V; 1989. p. 295–300.

4. Selective low pressure chemical vapor deposition of tungsten;Broadbent;J Electrochem Soc,1984

5. Submicron wiring technology with tungsten and planarization;Kaanta;IEDM Tech Dig,1987

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