Minority Carrier Lifetime inp‐nJunction Devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1722879
Reference3 articles.
1. Switching Time in Junction Diodes and Junction Transistors
2. Transient Response of a p‐n Junction
3. p−nJunction Transistors
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1. Diffusion length analysis and measurement in the base region of photodiodes;Journal of Physics and Chemistry of Solids;2003-12
2. Properties of p +-n structures with a buried layer of radiation-induced defects;Semiconductors;1998-03
3. Carrier transport in a diode base with locally nonuniform recombination properties;Technical Physics Letters;1997-05
4. Steady state characterization of an optically controlled p-i-n diode for low frequency switching under front/back illumination;IEEE Transactions on Electron Devices;1996-07
5. Sample Thickness Dependence of Minority Carrier Lifetimes Measured Using an ac Photovoltaic Method;Japanese Journal of Applied Physics;1987-12-20
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