Carrier transport in a diode base with locally nonuniform recombination properties-Reference-Cited by-同舟云学术

Carrier transport in a diode base with locally nonuniform recombination properties

Published:1997-05 Issue:5 Volume:23 Page:369-372
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Ivanov A. M.,Strokan N. B.,Shuman V. B.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/1.1261684.pdf

Reference13 articles.

1. Yu. N. Nosov, Physical Principles of the Pulsed Semiconductor Diode [in Russian], Nauka, Moscow (1968), p. 263.

2. V. S. Vavilov, B. M. Gorin, N. S. Danilin, A. E. Kiv, Yu. L. Nurov, and V. I. Shakhovtsov, Radiation Methods in Solid-State Electronics [in Russian], Radio i Svyaz’, Moscow (1990), p. 263.

3. V. V. Emtsev and T. V. Mashovets, Impurities and Point Defects in Semiconductors [in Russian], Radio i Svyaz’, Moscow (1981), p. 248.

4. Ion Implantation Science and Technology, edited by J. F. Ziegler (Academic Press, New York, 1984).

5. L. S. Berman, A. M. Ivanov, and N. B. Strokan, Pis’ma Zh. Tekh. Fiz. 19(20), 24 (1993) [Tech. Phys. Lett. 19, 647 (1993)].

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