Charge transfer in the presence of a layer of trapping centers in semiconductor SiC ionizing radiation detectors-Reference-Cited by-同舟云学术

Charge transfer in the presence of a layer of trapping centers in semiconductor SiC ionizing radiation detectors

Published:2008-12 Issue:12 Volume:34 Page:1069-1071
ISSN:1063-7850
Container-title:Technical Physics Letters
language:en
Short-container-title:Tech. Phys. Lett.

Author:

Ivanov A. M.,Kalinina E. V.,Strokan N. B.

Publisher

Pleiades Publishing Ltd

Subject

Physics and Astronomy (miscellaneous)

Link

http://link.springer.com/content/pdf/10.1134/S1063785008120249.pdf

Reference8 articles.

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4. E. V. Kalinina, N. B. Strokan, A. M. Ivanov, A. A. Sitnikova, A. V. Sadokhin, A. Yu. Azarov, V. G. Kossov, and R. R. Yafaev, Fiz. Tekh. Poluprovodn. (St. Petersburg) 42, 87 (2008) [Semiconductors 42, 86 (2008)].

5. E. Kalinina, G. Kholujanov, A. Sitnikova, V. Kossov, R. Yafgaev, G. Pensl, S. Reshanov, A. Hallen, and A. Konstantinov, Mater. Sci. Forum 433–436, 637 (2003).

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