Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers
Author:
Affiliation:
1. Ioffe Physicotechnical Institute RAS
2. Russian Academy of Sciences
3. Electron Optronic
4. Friedrich-Alexander-Universität Erlangen-Nürnberg
5. Acreo AB
6. AMDS AB
7. KTH Royal Institute of Technology
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.433-436.637.pdf
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2. E. Kalinina, G. Kholujanov, V. Solov'ev, A. Strel'chuk, V. Kossov, R. Yafaev, A. Kovarskiy, A. Shchukarev, S. Obyden, G. Saparin, P. Ivannikov, A. Hallen, A. Konstantinov: Appl. Surf. Sci., vol. 184, (2001), p.323.
3. E. Kalinina, G. Kholujanov, V. Solov'ev, A. Strel'chuk, A. Zubrilov, V. Kossov, R. Yafaev, A.P. Kovarski, A. Hallén, A. Konstantinov, S. Karlsson, C. Adås, S. Rendakova, V. Dmitriev, Appl. Phys. Lett. vol. 77, � 19 (2000), p.6.
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