Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers-Reference-Cited by-同舟云学术

Gettering Effect with Al Implanted into 4H-SiC CVD Epitaxial Layers

Published:2003-09 Issue: Volume:433-436 Page:637-640
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Kalinina Evgenia V.¹,Kholuyanov G.¹,Sitnikova Alla A.²,Kossov V.³,Yafaev R.³,Pensl Gerhard⁴,Reshanov Sergey A.⁵,Konstantinov Andrey O.⁶,Hallén Anders⁷

Affiliation:

1. Ioffe Physicotechnical Institute RAS

2. Russian Academy of Sciences

3. Electron Optronic

4. Friedrich-Alexander-Universität Erlangen-Nürnberg

5. Acreo AB

6. AMDS AB

7. KTH Royal Institute of Technology

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.433-436.637.pdf

Reference7 articles.

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2. E. Kalinina, G. Kholujanov, V. Solov'ev, A. Strel'chuk, V. Kossov, R. Yafaev, A. Kovarskiy, A. Shchukarev, S. Obyden, G. Saparin, P. Ivannikov, A. Hallen, A. Konstantinov: Appl. Surf. Sci., vol. 184, (2001), p.323.

3. E. Kalinina, G. Kholujanov, V. Solov'ev, A. Strel'chuk, A. Zubrilov, V. Kossov, R. Yafaev, A.P. Kovarski, A. Hallén, A. Konstantinov, S. Karlsson, C. Adås, S. Rendakova, V. Dmitriev, Appl. Phys. Lett. vol. 77, � 19 (2000), p.6.

4. A. Goetzberger and W. Shockley: J. Appl. Phys. Vol. 31, (1960), p.1821.

5. T.M. Buck, K.A. Pickar, J.M. Poate, and C.M. Hsich: Appl. Phys. Lett. vol. 21, (1972), p.486.

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