Lack of importance of ambient gases on picosecond laser‐induced phase transitions of silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92454
Reference6 articles.
1. Picosecond laser‐induced melting and resolidification morphology on Si
2. Order-Disorder Transition in Single-Crystal Silicon Induced by Pulsed uv Laser Irradiation
3. Preparation of atomically clean silicon surfaces by pulsed laser irradiation
4. Cleaning of Silicon Surfaces by Heating in High Vacuum
5. Influence of16O,12C,14N, and noble gases on the crystallization of amorphous Si layers
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