The influence of electron energy quantization in a space-charge region on the accumulation capacitance of InAs metal-oxide-semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4931772
Reference18 articles.
1. Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substrates
2. InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces
3. Oxide-free InAs(111)A interface in metal-oxide-semiconductor structure with very low density of states prepared by anodic oxidation
4. The influences of surface treatment and gas annealing conditions on the inversion behaviors of the atomic-layer-deposition Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitor
5. Accumulation capacitance of narrow band gap metal-oxide-semiconductor capacitors
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1. Enhancement in Electrical and Thermal Properties of LDPE with Al2O3 and h-BN as Nanofiller;Materials;2022-04-13
2. Al2O3/InGaAs interface passivation by fluorine-containing anodic layers;Journal of Applied Physics;2022-02-28
3. The Effect of Fluorine on the Density of States at the Anodic Oxide Layer/In0.53Ga0.47As Interface;Technical Physics Letters;2021-12-15
4. Study of the Density of Interface States at the Insulator/In0.52Al0.48As Interface;Technical Physics Letters;2020-05
5. Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance;Journal of Applied Physics;2018-05-07
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