Oxide-free InAs(111)A interface in metal-oxide-semiconductor structure with very low density of states prepared by anodic oxidation-Reference-Cited by-同舟云学术

Oxide-free InAs(111)A interface in metal-oxide-semiconductor structure with very low density of states prepared by anodic oxidation

Published:2014-10-20 Issue:16 Volume:105 Page:161601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Valisheva N. A.¹,Aksenov M. S.¹,Golyashov V. A.¹,Levtsova T. A.¹,Kovchavtsev A. P.¹,Gutakovskii A. K.¹²,Khandarkhaeva S. E.²,Kalinkin A. V.³,Prosvirin I. P.²³,Bukhtiyarov V. I.²³,Tereshchenko O. E.¹²

Affiliation:

1. Rzhanov Institute of Semiconductor Physics, SB RAS, 13, Lavrentiev Ave., Novosibirsk 630090, Russian Federation

2. Novosibirsk State University, 2 Pirogova Str., Novosibirsk 630090, Russian Federation

3. Boreskov Institute of Catalysis, SB RAS, 5, Lavrentiev Ave., Novosibirsk 630090, Russian Federation

Funder

Ministry of Education and Science of the Russian Federation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4899137

Reference27 articles.

1. Fundamentals of III-V Semiconductor MOSFETs

2. Accumulation layer profiles at InAs polar surfaces

3. Intrinsic electron accumulation layers on reconstructed clean InAs(100) surfaces

4. Charge Accumulation at InAs Surfaces

5. A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer

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