InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces-Reference-Cited by-同舟云学术

InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

Published:2013-09-30 Issue:14 Volume:103 Page:143510
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang C. H.,Wang S. W.,Doornbos G.,Astromskas G.,Bhuwalka K.,Contreras-Guerrero R.,Edirisooriya M.,Rojas-Ramirez J. S.,Vellianitis G.,Oxland R.,Holland M. C.,Hsieh C. H.,Ramvall P.,Lind E.,Hsu W. C.,Wernersson L.-E.,Droopad R.,Passlack M.,Diaz C. H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4820477

Reference8 articles.

1. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

2. Growth of heterostructures on InAs for high mobility device applications

3. Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces

4. In-situ XPS and RHEED study of gallium oxide on GaAs deposition by molecular beam epitaxy

5. Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2×8)/(2×4)

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