Liquid phase epitaxy ofn‐type GaAs from Bi solution
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354308
Reference31 articles.
1. Revised calculation of point defect equilibria and non-stoichiometry in gallium arsenide
2. Liquid‐phase epitaxial growth of thin GaAs layers from supercooled solutions
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Low-temperature liquid-phase epitaxy growth from Ga–As–Bi solution;Thin Solid Films;2006-04
2. Growth and characterization of InAs layers obtained by liquid phase epitaxy from Bi solvents;Semiconductor Science and Technology;2006-03-08
3. Impurity investigation and structural quality determination of GaAs epilayers from mixed solvents (Ga+Bi);Journal of Crystal Growth;2000-11
4. Effect of bismuth on liquid-phase epitaxy (LPE) grown GaAs layer using Ga–As–Bi melt;Journal of Crystal Growth;1999-04
5. Investigations on the estimation of arsenic atoms and growth of GaAs epitaxial layers from bismuth solution;Materials Science and Engineering: B;1999-03
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