Impurity investigation and structural quality determination of GaAs epilayers from mixed solvents (Ga+Bi)-Reference-Cited by-同舟云学术

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Impurity investigation and structural quality determination of GaAs epilayers from mixed solvents (Ga+Bi)

Published:2000-11 Issue:4 Volume:219 Page:321-326
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Saravanan S,Baskar K,Soga T,Jimbo T,Umeno M

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference16 articles.

1. LPE grown GaAs layers from Ga-As-Bi solution

2. Ga-As-Bi phase equilibrium study by LPE for thin solutions

3. N.V. Ganina, V.B. Ufimtsev, V.I. Fistul, Pis’ma Zh. Tekh. Fiz. 8 (1982) 620 [Sov. Tech. Phys. Lett. 8 (1982) 270].

4. N.A. Yakusheva, K.S. Zhuravlev, O.A. Shegai, Fiz. Tekh. Poluprovodn 22 (1988) 2083 [Sov. Phys. Semicond. 22 (1988) 1320].

5. Yu.F. Biryulin, V.G. Nikitin, D.L. Nugmanov, V.V. Chaldyshev, Pis’ma Zh. Tekh. Fiz. 13 (1987) 1255 [Sov. Tech. Phys. Lett. 13 (1987) 527].

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt;Scientific Reports;2024-01-16

2. Properties of Al x Ga 1-x As grown from a mixed Ga-Bi melt;2023-07-27

3. Photovoltaics literature survey (No. 7);Progress in Photovoltaics: Research and Applications;2001

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