Low-temperature liquid-phase epitaxy growth from Ga–As–Bi solution
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
Reference24 articles.
1. Effect of bismuth on liquid-phase epitaxy (LPE) grown GaAs layer using Ga–As–Bi melt
2. Investigations on the estimation of arsenic atoms and growth of GaAs epitaxial layers from bismuth solution
3. Investigations on the concentration profiles of arsenic atoms during liquid phase epitaxial growth of GaAs from Ga-As-Bi solution
4. Correlation of surface morphologies with Mn compositions of Ga1−xMnxAs epilayers grown by liquid phase epitaxy
5. High Quality GaAs Epitaxial Layers Grown from Ga–As–Bi Solutions by Liquid Phase Epitaxy
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt;Scientific Reports;2024-01-16
2. Properties of Al x Ga 1-x As grown from a mixed Ga-Bi melt;2023-07-27
3. Phase Equilibria in the Al–Ga–As–Bi System at 900°C;Inorganic Materials;2023-07
4. Исследование фазовых равновесий в системе Al–Ga–As–Bi при 900°C;Неорганические материалы;2023-07-01
5. Analysis of the VIS–NIR spectral reflectance of Bi/GaAs structures grown by MOVPE and UHVE;Journal of Crystal Growth;2014-06
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