Morphology and size distribution of oxide precipitates in as‐grown Czochralski silicon crystals
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112886
Reference17 articles.
1. Investigations of oxygen precipitates in Czochralski silicon wafers by using infrared tomography
2. Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon
3. Axial Microscopic Distribution of Grown-in Defects in Czochralski-Grown Silicon Crystals
4. A study of oxygen precipitation in silicon using high-resolution transmission electron microscopy, small-angle neutron scattering and infrared absorption
5. Structure of Thermally-Induced Microdefects in Czochralski Silicon
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