Kinetic modeling of hydrogen adsorption/absorption in thin films on hydrogen‐sensitive field‐effect devices: Observation of large hydrogen‐induced dipoles at the Pd‐SiO2interface-Reference-Cited by-同舟云学术

Kinetic modeling of hydrogen adsorption/absorption in thin films on hydrogen‐sensitive field‐effect devices: Observation of large hydrogen‐induced dipoles at the Pd‐SiO2interface

Published:1995-07-15 Issue:2 Volume:78 Page:988-996
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Fogelberg J.,Eriksson M.,Dannetun H.,Petersson L.‐G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.360293

Reference19 articles.

1. Physics with catalytic metal gate chemical sensors

2. Kinetics of hydrogen absorption by Pd(110)

3. Reactions between hydrocarbons and an oxygen covered palladium surface

4. NO dissociation on polycrystalline palladium studied with a Pd‐metal‐oxide‐semiconductor structure

5. Ammonia Dissociation on Oxygen Covered Palladium Studied with a Hydrogen Sensitive Pd-MOS Device

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