Proposal for variability-induced effective radius of elliptical gate-all-around junctionless transistors and its applicability in hydrogen gas sensors-Reference-Cited by-同舟云学术

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Proposal for variability-induced effective radius of elliptical gate-all-around junctionless transistors and its applicability in hydrogen gas sensors

Published:2024-06 Issue: Volume:180 Page:155337
ISSN:1434-8411
Container-title:AEU - International Journal of Electronics and Communications
language:en
Short-container-title:AEU - International Journal of Electronics and Communications

Author:

Sharma Princy^ORCID,Kumar Subindu,Kumar Pankaj^ORCID

Publisher

Elsevier BV

Reference53 articles.

1. An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET;Ghosh;Microelectronics J,2012

2. An optimized junctionless GAA MOSFET design based on multi-objective computation for high-performance ultra-low power devices;Bendib;J Semicond,2014

3. Metal gate work function engineering on gate leakage of MOSFETs;Hou;IEEE Trans Electron Devices,2004

4. Hetero-Dielectric oxide engineering on dopingless gate all around nanowire MOSFET with Schottky contact source/drain;Kaur;AEU - Int J Electron Commun,2019

5. Multi-gate SOI MOSFETs;Colinge;Microelectron Eng,2007

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