Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments-Reference-Cited by-同舟云学术

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Electrical and physical characterization of the Al2O3/p-GaSb interface for 1%, 5%, 10%, and 22% (NH4)2S surface treatments

Published:2014-10-20 Issue:16 Volume:105 Page:162907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Peralagu Uthayasankaran¹,Povey Ian M.²,Carolan Patrick²,Lin Jun²,Contreras-Guerrero Rocio³,Droopad Ravi³,Hurley Paul K.²,Thayne Iain G.¹^ORCID

Affiliation:

1. School of Engineering, University of Glasgow, Glasgow, G12 8LT, United Kingdom

2. Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland

3. Ingram School of Engineering, Texas State University, San Marcos, Texas 78666, USA

Funder

Semiconductor Research Corporation (SRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4899123

Reference21 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

3. The oxidation of intermetallic compounds—III

4. Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning

5. Chemical and structural characterization of GaSb(100) surfaces treated by HCl-based solutions and annealed in vacuum

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2. Improved Electrostatics through Digital Etch Schemes in Vertical GaSb Nanowire p-MOSFETs on Si;ACS Applied Electronic Materials;2022-01-10

3. Interface Optimization and Modulation of Leakage Current Conduction Mechanism of Yb2O3/GaSb MOS Capacitors with ALD-Driven Laminated Interlayers;ACS Applied Electronic Materials;2021-02-10

4. Anomalous minority carrier behavior induced by chemical surface passivation solution in p-type GaSb metal–oxide–semiconductor capacitors on Si substrates;Journal of Vacuum Science & Technology B;2020-09

5. Modification of the Atomic and Electronic Structure of III–V Semiconductor Surfaces at Interfaces with Electrolyte Solutions (Review);Semiconductors;2020-06-30

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