Numerical analysis on the effects of bandgap energy and polarization of electron blocking layer in near-ultraviolet light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3679180
Reference17 articles.
1. White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors
2. Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip
3. Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes
4. The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy
5. Origin of efficiency droop in GaN-based light-emitting diodes
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