Improved Design of Slope-Shaped Hole-Blocking Layer and Electron-Blocking Layer in AlGaN-Based Near-Ultraviolet Laser Diodes

Author:

Gao Maolin123,Yang Jing1,Jia Wei23,Zhao Degang14,Zhai Guangmei2,Dong Hailiang2,Xu Bingshe23

Affiliation:

1. State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China

2. Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Taiyuan 030002, China

3. Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering, Taiyuan 030024, China

4. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

Abstract

The injection and leakage of charge carriers have a significant impact on the optoelectronic performance of GaN-based lasers. In order to improve the limitation of the laser on charge carriers, a slope-shape hole-barrier layer (HBL) and electron-barrier layer (EBL) structure are proposed for near-UV (NUV) GaN-based lasers. We used Crosslight LASTIP for the simulation and theoretical analysis of the energy bands of HBL and EBL. Our simulations suggest that the energy bands of slope-shape HBL and EBL structures are modulated, which could effectively suppress carrier leakage, improve carrier injection efficiency, increase stimulated radiation recombination rate in quantum wells, reduce the threshold current, improve optical field distribution, and, ultimately, improve laser output power. Therefore, using slope-shape HBL and EBL structures can achieve the superior electrical and optical performance of lasers.

Funder

Shanxi-Zheda Institute of Advanced Materials and Chemical Engineering

National Natural Science Foundation of China

Strategic Priority Research Program of Chinese Academy of Sciences

Publisher

MDPI AG

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