The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy-Reference-Cited by-同舟云学术

The effect of trimethylgallium flows in the AlInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

Published:2011-03-21 Issue:12 Volume:98 Page:121115
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fu Yi-Keng,Jiang Ren-Hao,Lu Yu-Hsuan,Chen Bo-Chun,Xuan Rong,Fang Yen-Hsiang,Lin Chia-Feng,Su Yan-Kuin,Chen Jenn-Fang

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3571440

Reference10 articles.

1. Recent progress of nitride-based light emitting devices

2. InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode

3. Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip

4. Influence of the barrier composition on the light output of InGaN multiple-quantum-well ultraviolet light emitting diodes

5. High power pure-blue semiconductor lasers

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