Redistribution of arsenic in silicon during high pressure thermal oxidation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98067
Reference10 articles.
1. The Diffusion of Ion‐Implanted Arsenic in Silicon
2. Residual Stress, Chemical Etch Rate, Refractive Index, and Density Measurements on SiO2 Films Prepared Using High Pressure Oxygen
3. Redistribution of Acceptor and Donor Impurities during Thermal Oxidation of Silicon
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3. Formation of As enriched layer by steam oxidation of As+-implanted Si;Applied Surface Science;2009-03
4. Precipitation of As in thermally oxidized ion-implanted Si crystals;Applied Physics Letters;1998-11-02
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