Influence of local surface defects on the minority-carrier lifetime of passivating-contact solar cells

Author:

Cattin Jean1ORCID,Haschke Jan1ORCID,Ballif Christophe1ORCID,Boccard Mathieu1ORCID

Affiliation:

1. Photovoltaics and Thin-Film Electronics Laboratory (PV-lab), Institute of Microengineering (IMT), École Polytechnique Fédérale de Lausanne (EPFL), Rue de la Maladière 71b, CH-2002 Neuchâtel, Switzerland

Funder

Swiss National Science Foudation

Qatar Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference35 articles.

1. J. Zhao , M. Konig , Y. Yao , Y. Wang , R. Zhou , T. Xie , and H. Deng , in IEEE 7th World Conference Photovoltaics Energy Conversion (A Joint Conference 45th IEEE PVSC, 28th PVSEC 34th EU PVSEC) ( IEEE, 2018), pp. 1514–1519.

2. Imaging method for laterally resolved measurement of minority carrier densities and lifetimes: Measurement principle and first applications

3. Spatially resolved modeling of the combined effect of dislocations and grain boundaries on minority carrier lifetime in multicrystalline silicon

4. Metallization-induced recombination losses of bifacial silicon solar cells

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