Stability Study of Silicon Heterojunction Solar Cells Fabricated with Gallium‐ and Boron‐Doped Silicon Wafers-Reference-Cited by-同舟云学术

Stability Study of Silicon Heterojunction Solar Cells Fabricated with Gallium‐ and Boron‐Doped Silicon Wafers

Published:2021-07-27 Issue:9 Volume:5 Page:2100406
ISSN:2367-198X
Container-title:Solar RRL
language:en
Short-container-title:Sol. RRL

Author:

Vicari Stefani Bruno¹^ORCID,Kim Moonyong¹,Wright Matthew¹,Soeriyadi Anastasia¹,Andronikov Dmitriy²³,Nyapshaev Ilya²³,Abolmasov Sergey²³,Emtsev Konstantin²³,Abramov Alexey²³,Hallam Brett¹

Affiliation:

1. School of Photovoltaics and Renewable Energy Engineering (SPREE) UNSW Sydney 2052 Australia

2. R&D Center of Thin Film Technologies in Energetics Hevel Solar St. Petersburg 194064 Russia

3. Ioffe Institute Russian Academy of Sciences St. Petersburg 194021 Russia

Funder

Australian Renewable Energy Agency

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/solr.202100406

Reference51 articles.

1. “International Roadmap for Photovoltaics 12th Edition ”VDMA 2021.

2. Silicon wafers for industrial n-type SHJ solar cells: Bulk quality requirements, large-scale availability and guidelines for future developments

3. Large‐Area Boron‐Doped 1.6 Ω cm p‐Type Czochralski Silicon Heterojunction Solar Cells with a Stable Open‐Circuit Voltage of 736 mV and Efficiency of 22.0%

4. Y.Wang presented at3rd Int. Workshop on Silicon Heterojunction Solar Cells: Science and Industry Technology Virtual workshop. 19‐21 October of2020.

5. The Technical and Economic Viability of Replacing n-type with p-type Wafers for Silicon Heterojunction Solar Cells

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