Influence of germanium content on the photoluminescence of erbium- and oxygen-doped SiGe grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120267
Reference13 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
2. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
3. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon
4. Temperature dependence and quenching processes of the intra-4fluminescence of Er in crystalline Si
5. Room‐temperature sharp line electroluminescence at λ=1.54 μm from an erbium‐doped, silicon light‐emitting diode
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1. Low energy shifted photoluminescence of Er3+ incorporated in amorphous hydrogenated silicon–germanium alloys;Journal of Non-Crystalline Solids;2009-06
2. The effect of hole confinement on photoluminescence from Er in SiGe/Si quantum wells;Materials Science and Engineering: B;2008-01
3. 1.54μm photoluminescence of Er-doped GeOx thin films;Journal of Applied Physics;2007-11-15
4. Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer;Physica B: Condensed Matter;2003-12
5. Recent developments in rare-earth doped materials for optoelectronics;Progress in Quantum Electronics;2002
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