Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer-Reference-Cited by-同舟云学术

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Enhancing effect of tensile strain on photoluminescence of Er in Si on a SiGe layer

Published:2003-12 Issue: Volume:340-342 Page:818-822
ISSN:0921-4526
Container-title:Physica B: Condensed Matter
language:en
Short-container-title:Physica B: Condensed Matter

Author:

Ishiyama T.,Yoshida M.,Yamashita Y.,Kamiura Y.,Date T.,Hasegawa T.,Inoue K.,Okuno K.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Optical activation and excitation mechanisms of Er implanted in Si

2. Effect of O:Er concentration ratio on the structural, electrical, and optical properties of Si:Er:O layers grown by molecular beam epitaxy

3. Impurity enhancement of the 1.54‐μm Er3+luminescence in silicon

4. Electrical and optical characterization of Er‐implanted Si: The role of impurities and defects

5. Role of codopants in the luminescent output from Si:Er

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Observation of photo- and electro-luminescence at 1.54μm of Er in strained Si and SiGe;Materials Science and Engineering: B;2008-01

2. Enhancement of photoluminescence at 1.54μm from Er in strained Si and SiGe;Physica B: Condensed Matter;2006-04

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