Diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectric
Author:
Affiliation:
1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
2. Xidian-Wuhu Research Institute, Wuhu 241002, China
Funder
National MCFEnergy R&D Program
National Key Science and Technology Special Project
National Natural Science Foundation of China
China Postdoctoral Science Foundation
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0077530
Reference44 articles.
1. High Carrier Mobility in Single-Crystal Plasma-Deposited Diamond
2. Logic Circuits With Hydrogenated Diamond Field-Effect Transistors
3. Hydrogenating Effect of Single-Crystal Diamond Surface
4. Surface transfer doping of diamond by MoO3: A combined spectroscopic and Hall measurement study
5. Thermal Stabilization of Hole Channel on H-Terminated Diamond Surface by Using Atomic-Layer-Deposited Al$_{2}$O$_{3}$ Overlayer and its Electric Properties
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