High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2794419
Reference19 articles.
1. High Al-content AlGaN/GaN MODFETs for ultrahigh performance
2. High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions
3. Characterization of different-Al-content Al[sub x]Ga[sub 1−x]N/GaN heterostructures and high-electron-mobility transistors on sapphire
4. Power electronics on InAlN/(In)GaN: Prospect for a record performance
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