Deactivation of group III acceptors in silicon during keV electron irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94167
Reference5 articles.
1. Generation‐annealing kinetics and atomic models of a compensating donor in the surface space charge layer of oxidized silicon
2. Deactivation of the boron acceptor in silicon by hydrogen
3. Effects of keV electron irradiation on the avalanche‐electron generation rates of three donors on oxidized silicon
4. Study of the atomic models of three donor‐like traps on oxidized silicon with aluminum gate from their processing dependences
5. Determination of Kilovolt Electron Energy Dissipation vs Penetration Distance in Solid Materials
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