Observation of a multilayer planar in-grown stacking fault in 4H-SiC p-i-n diodes-Reference-Cited by-同舟云学术

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Observation of a multilayer planar in-grown stacking fault in 4H-SiC p-i-n diodes

Published:2006-09-04 Issue:10 Volume:89 Page:103519
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Caldwell Joshua D.,Klein P. B.,Twigg Mark E.,Stahlbush Robert E.,Glembocki Orest J.,Liu Kendrick X.,Hobart Karl D.,Kub Fritz

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2346135

Reference13 articles.

1. Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device Yields

2. Degradation of hexagonal silicon-carbide-based bipolar devices

3. Characterization of in-grown stacking faults in 4H–SiC (0001) epitaxial layers and its impacts on high-voltage Schottky barrier diodes

4. Structural analysis and reduction of in-grown stacking faults in 4H–SiC epilayers

5. Characterization of defects in the drift region of 4H-SiC pin diodes via optical beam induced current

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1. Nanoscale Infrared Spectroscopic Characterization of Extended Defects in 4H-Silicon Carbide;Nano Letters;2024-01-02

2. Exploiting Phonon‐Resonant Near‐Field Interaction for the Nanoscale Investigation of Extended Defects;Advanced Functional Materials;2020-01-20

3. Terahertz surface polaritons;Acta Physica Sinica;2017

4. Nanotubes, nanobelts, nanowires, and nanorods of silicon carbide from the wheat husks;Journal of Applied Physics;2015-09-14

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