Heteroepitaxial growth of InxGa1−xAs on graphoepitaxially grown germanium
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103089
Reference15 articles.
1. Crystallographic orientation of silicon on an amorphous substrate using an artificial surface‐relief grating and laser crystallization
2. Silicon graphoepitaxy using a strip‐heater oven
3. Graphoepitaxy of germanium on gratings with square‐wave and sawtooth profiles
4. The Mechanism of Orientation in Si Graphoepitaxy by Laser or Strip Heater Recrystallization
5. Low‐temperature silicon crystal growth on an amorphous planar substrate
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Control of crystalline orientation of germanium by lateral graphoepitaxy on SiO2 microstructures;Journal of Applied Physics;2005-06
2. Lateral Graphoepitaxy of Germanium Controlled by Microstructures on SiO2Surface;Japanese Journal of Applied Physics;2004-05-21
3. Piezoreflectance study of InP near the absorption edge;Semiconductor Science and Technology;1996-12-01
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