The Mechanism of Orientation in Si Graphoepitaxy by Laser or Strip Heater Recrystallization-Reference-Cited by-同舟云学术

The Mechanism of Orientation in Si Graphoepitaxy by Laser or Strip Heater Recrystallization

Published:1983-10-01 Issue:10 Volume:130 Page:2050-2053
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Smith Henry I.¹²³,Thompson C. V.¹²³,Geis M. W.¹²³,Lemons R. A.¹²³,Bosch M. A.¹²³

Affiliation:

1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

2. Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173

3. Bell Laboratories, Holmdel, New Jersey 07733

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.2119520/pdf

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low temperature polycrystalline silicon with single orientation on glass by blue laser annealing;Thin Solid Films;2016-10

2. Effect of deposition temperature on electron-beam evaporated polycrystalline silicon thin-film and crystallized by diode laser;Applied Physics Letters;2014-06-16

3. Origin of preferential grain orientation in excimer laser-induced crystallization of silicon thin films;Applied Physics Letters;2012-04-16

4. Effect of Film Thickness Variation on (100)-Surface Texturing of MPS Processed Polycrystalline Si Films;MRS Proceedings;2012

5. Single-Crystal Germanium Growth on Amorphous Silicon;Advanced Functional Materials;2011-12-21