Low temperature polycrystalline silicon with single orientation on glass by blue laser annealing-Reference-Cited by-同舟云学术

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Low temperature polycrystalline silicon with single orientation on glass by blue laser annealing

Published:2016-10 Issue: Volume:616 Page:838-841
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Jin Seonghyun,Hong Seungpyo,Mativenga Mallory,Kim Boram,Shin Heung Hyun,Park Jong Kab,Kim Tae-Woong,Jang Jin

Funder

Ministry of Trade, Industry and Energy

Korea Display Research Corporation

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Polysilicon TFT technology for active matrix OLED displays;Stewart;IEEE Trans. Electron Devices,2001

2. Bridged-grain solid-phase-crystallized polycrystalline-silicon thin-film transistors;Zhou;IEEE Electron Device Lett.,2012

3. Metal-induced crystallization of amorphous silicon;Yoon;Thin Solid Films,2001

4. The effects of nanometal-induced crystallization on the electrical characteristics of bottom-gate poly-Si thin-film transistors;Lee;J. Nanosci. Nanotechnol.,2011

5. Comparison of excimer laser recrystallized prepatterned and unpatterned silicon films on SiO2;Giust;J. Appl. Phys.,1997

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