Bridged-Grain Solid-Phase-Crystallized Polycrystalline-Silicon Thin-Film Transistors-Reference-Cited by-同舟云学术

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Bridged-Grain Solid-Phase-Crystallized Polycrystalline-Silicon Thin-Film Transistors

Published:2012-10 Issue:10 Volume:33 Page:1414-1416
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhou Wei,Meng Zhiguo,Zhao Shuyun,Zhang Meng,Chen Rongsheng,Wong Man,Kwok Hoi-Sing

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/6310089/06290340.pdf?arnumber=6290340

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3. Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors;Micromachines;2022-05-27

4. Low-Frequency Noise in Bridged-Grain Polycrystalline Silicon Thin-Film Transistors;IEEE Transactions on Electron Devices;2022-04

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