Ge-modified Si(100) substrates for the growth of 3C-SiC(100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2206558
Reference25 articles.
1. Elastic properties of β-SiC films by Brillouin light scattering
2. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
3. Use of deposition pressure to control residual stress in polycrystalline SiC films
4. How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates
5. Relaxation of interfacial stress and improved quality of heteroepitaxial 3C–SiC films on (100)Si deposited by organometallic chemical vapor deposition at 1200 °C
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