Growth and diffusion of abrupt beryllium‐doped profiles in gallium arsenide by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100412
Reference9 articles.
1. MOVPE growth of beryllium-doped gallium arsenide using diethylberyllium
2. Silicon and beryllium doping of OMVPE grown AlxGa1−xAs (x = 0−0.3) using silane and diethylberyllium
3. Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy
4. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
5. Annealing studies of Be‐doped GaAs grown by molecular beam epitaxy
Cited by 23 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Incorporation of Be dopant in GaAs core and core–shell nanowires by molecular beam epitaxy;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2016-03
2. A combined kick-out and dissociative diffusion mechanism of grown-in Be in InGaAs and InGaAsP. A new finite difference-Bairstow method for solution of the diffusion equations;Journal of Applied Physics;2014-09-14
3. A computational study of ion-implanted beryllium diffusion in gallium arsenide;Computational Materials Science;2008-10
4. Diffusion mechanism of implanted Be in GaAs;physica status solidi (b);2007-12-14
5. Simulation of p-type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs;physica status solidi (b);2006-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3